P-N Junction Diode: A P-N Junction Diode is one of the simplest semiconductor devices around, and which has the characteristic of passing current in only one direction only. startxref 0000232085 00000 n interface or a boundary between two semiconductor material types Let’s now get back to the equilibrium condition and start to analyze the junction quantitatively. xڔUmL[e>/���N����B����u]da�RZJ���m6�ؗPe��M��1��Ȍ���?4~�P�1F���c&Dq�HL4�����{[�2�ɞ����9�9�=��� �+��� �!1���zD-$n# p��h�s���H��`E{�&�_7���w+ ���s���{��?�T�����G���|�Ǻ���D��[���� O��rJ���R�BST\(��%jeu]mHo�y�n��g1jMV��Q�|��q)-R�D�R�)4ʈ�f����_��� N���o 9As�-R�\",Qbơ�L2�V��d�k}v�۩�lu���$��: E�B�I��PU�Ft z��jě�\~�'���)Ari��P-��p2e���Ğ�Z�uvuD{O�nl�Ρ �n�~�����u���s��N�c0�����;j�[�����\Z$�r�V��(���H����3k=~���08]F�������d{��h��I:� 1 Depletion region (a.k.a space-charge region) width Depletion region of the p-n junction summary 2 2 0 DA bi r A D q NN 0000231039 00000 n 0000009415 00000 n P-N Junction Diode (a) Construction It is a two-terminal device consisting of a P-N junction formed either in Ge or Si crystal. Download Free PDF. 323 0 obj <> endobj The direction of arrow is the direction of conventional current flow (under forward bias). A P-N Junction Diode is formed by doping one side of a piece of silicon with a P-type dopant (Boran) and the other side with a N-type dopant (phosphorus).Ge can be used instead of Silicon. 323 78 0000055839 00000 n в�G͝��l�c5F�� 0000014422 00000 n 0000014200 00000 n 0000026573 00000 n A few thermally generated electrons will also exist in the p side; these are termed minority carriers. Similarly, holes diffuse from p-side to n-side. • For integrated p-n … 0000165260 00000 n The P-and N-type regions are referred to as anode and cathode respectively. Download with Google Download with Facebook. 0000022281 00000 n But if you put them together on an electronic circuit, you create a p-n junction and an interesting and very useful thing happens: Current can flow through the p-n junction, but only in one direction. 52.1. 1 0 obj << /Type /Page /Parent 329 0 R /Resources 2 0 R /Contents 3 0 R /Rotate -90 /Thumb 216 0 R /MediaBox [ 0 0 612 792 ] /CropBox [ 0 0 612 792 ] >> endobj 2 0 obj << /ProcSet [ /PDF /Text /ImageB /ImageC /ImageI ] /Font << /F2 342 0 R /F4 173 0 R /F5 174 0 R /F6 175 0 R /F7 351 0 R >> /XObject << /Im1 354 0 R /Im2 353 0 R >> /ExtGState << /GS1 355 0 R >> /ColorSpace << /Cs9 341 0 R >> >> endobj 3 0 obj << /Length 4391 /Filter /FlateDecode >> stream 0000004411 00000 n 0000003598 00000 n 0000018860 00000 n 0000059382 00000 n The process of applying an exte “biasing” NNSE 618 Lecture #20 8 Bias and currents in p-n junction Bias Potential barrier at the junction Energy band Equilibrium V=0 … A p-n junction diode allows electric current when it is forward biased and blocks electric current when it is reverse biased. 0000075701 00000 n �� w��sע�-c4�[yO�+�� ���K��d��,�9�������Ǔ&"�_ i��"�� Ȗ;nH��m& �[$!�Ń���T����V�S�{���O� 5w�d��Rdr��c��) �і/�1��q=�K4P���β�:m:Sr�ϧ�QY�6�7�Y�Uk�jo^��>� �c�y�A/�������^5=nAT!c{f����ޘh�IB2%���t�@Bp����q���«������B.�wWW�ǫ���C�e����O(���٧��p\1���|`��W�T��t&߉c�Ŕ"o��.W�㖿7u5���vKC)? P-n junctions consist of two semiconductor regions of opposite type. 0000003240 00000 n The p-n junction is the fundamental building block of the electronic age. 0000016910 00000 n endstream endobj 324 0 obj <> endobj 325 0 obj <> endobj 326 0 obj <> endobj 327 0 obj <> endobj 328 0 obj <>/Shading<>/ColorSpace<>/Font<>/ProcSet[/PDF/Text]/Properties<>/ExtGState<>>> endobj 329 0 obj <> endobj 330 0 obj [/Separation/Black/DeviceCMYK 368 0 R] endobj 331 0 obj <> endobj 332 0 obj <> endobj 333 0 obj <> endobj 334 0 obj <> endobj 335 0 obj <>stream • For integrated p-n … 0000003302 00000 n 0000018577 00000 n • pn junction diodes used in rectifying circuits, detectors in commu nications applications, bias shifters, input protection devices against electrostatic discharge. Its circuit symbol is shown in Fig. 0000018310 00000 n A p–n junction is a boundary or interface between two types of semiconductor materials, p-type and n-type, inside a single crystal of semiconductor. 0000231960 00000 n I-V characteristics of p-n junction: Shockley model From Sze, 1981 VV at 1 J J e tot s n n p p p n s L D n q L D p J 0 0 J J x J x tot n p p n ( ) ( ) a i n n N D n q 2 W p n . PN junction diode is symbolically represented as shown in picture. Specifically, current will flow readily in one direction (forward biased) but not in the other (reverse biased), creating the basic diode. CHAPTER 4 P-N JUNCTIONS IN SEMICONDUCTORS. � lft���S���*8����0�����>3M��OtHD{Y�v��jV1.X��:��c]J���"�Jh��RͪTۄ ;?�m�}�~���+�،�E��?�@�Y�M�'��Z���������/�JU�)�w��C-? H��W�nG��W��^`���z]-�X�h�`��R�R&),|�;"��{(^V���U��̼��]t��ﮗ���肻����B�k-�ž�R��y�z���� ����w�G��o���7��z�������ӻ�߆��o����w��������������no��{����>y���t��~�����ﯗ?����"��ދk�֔ą���;���ު{�]r/x�=�彻�/�>-kO�kk��C�q�� One terminal of p-n junction diode is Anode and other is cathode. • pn junction diodes used in rectifying circuits, detectors in commu nications applications, bias shifters, input protection devices against electrostatic discharge. The "p" (positive) side contains an excess of holes, while the "n" (negative) side contains an excess of electrons in the outer shells of the electrically neutral atoms there. 0000021618 00000 n Depletion layer opposes only the the majority carrier not minority carrier. 0000165952 00000 n The p-n junction is a versatile element, which can be used as a Let’s now get back to the equilibrium condition and start to analyze the junction quantitatively. ��k�z^,VB�>�!�k���C\��ıM�>9d�(� ("�I�ƺP���X. This is a classic case of Mother Nature using a negative feedback loop. 1 Depletion region (a.k.a space-charge region) width Depletion region of the p-n junction … PN junction diode is a two terminal device, the characteristics of diode depends on the polarity of the external potential applied to the PN junction diode. 0000059115 00000 n Download with Google Download with Facebook. 0000003122 00000 n xref 52.1 (a). Since the p-n junction demonstrates such a unipolar (rectifying) response to the applied voltage it is called a p-n diode and is denoted in circuit diagrams as a following symbol: or. �����&�ꄔi��SX]{��Pp�۳���r��[E�Q�1�ߤ�9���v?�\-14��*��q��$����8b������#)�DB,�%J�2�X�P���s�=>��nt;]f�7�2g�v$�!��p�����^�2��:p}��K/_��j|b�����s���$�^���n�����T�����{kbl��g�f�$��p��-d��>9<6zn����K3����fV#�Яoįf�e�|��̷���G���į�� From xxNNpn DA00= (/ ) Under reverse bias, Vbi has to be replaced with Vbi-Vr. p-n junctions behave like diodes, rectifying the current flow. 0000151108 00000 n ��:l��s3�1%�K�R�;Ɩ�-�_.u��u��V��������X�E��6���YU�Cd8�ccE��:Ծ'l���7-$�b��3�ˈ�q�Ҳ����jEh)�f]����N��kO�� PN Junction diode. Download Free PDF. 0000164935 00000 n 0000000016 00000 n Lab Report on P-N Junction Diode Fabrication of 1 st Semester of M-Tech in VLSI & Microelectronics B) Chemical Etching or Polishing The given n type silicon wafer is a unpolished one. 0000004937 00000 n 0000005039 00000 n PN junction diode – Study Material. 2. p-n junction diode • pn junctions present in most semiconductor devices (BJTs and MOSFETs). If the p-n junction is strongly asymmetrical, for example: Depletion region width in the p-n junction (cont.) The P-N junction diode appeared in the year 1950. Let’s consider the band-bending and carrier densities at equilibrium. • Equilibrium. ),�`�J=Uu�e��i�4�ŗu���;u@,�������-�M���n;���s�!��eD�f 0000132126 00000 n 0000018201 00000 n 0000024336 00000 n When p-type and n-type materials are placed in contact with each other, the junction behaves very differently than either type of material alone. Alma VZ. ECE 310 Microelectronics I Lecture 5 pn Junctions PN junction under reverse bias The junction capacitance = = 0 = = 2(0 − ) 0000027248 00000 n P-N Junction One of the crucial keys to solid state electronics is the nature of the P-N junction. <<010B274485E22442AD4FCAA62790DDE8>]>> By themselves, P-type (positively charged) and N-type (negatively charged) semiconductors are just conductors. 400 0 obj <>stream However, unlike a resistor, a diode does not behave linearly with respect to the applied voltage as the diode has an exponential current-voltage ( I-V ) relationship. 0000013566 00000 n 0000059204 00000 n 0000028110 00000 n trailer m�w����耻X��\�x�����̳��]Xv��{�!`�� s��"�J� �ܷ,�� � / PN junction Diode plays a vital role in our electronic fields, because of their unique property (current flows in only one direction) they are used in many electronic or electrical circuits like rectifiers, switches, clippers, clampers, voltage multipliers.. The P-N junction diode is a two-terminal device. By exploring the electrical properties of silicon, it is possible to acquire an understanding of the inner work-ings of the p-n junction. 0000231421 00000 n A negative charge is established on the p side of the junction. �ϖNזPBv w�-�h��������0t @ͬG%l�c���Ue9��xq��YS��7ՌNr��C����dP�įX��j ���ݡ�����o����e�D x�a^p�A��X�Q���k����DXٖ�;�c#�G���V| 0000165722 00000 n 0000013893 00000 n 0000018255 00000 n 0000014111 00000 n PN junction Diode plays a vital role in our electronic fields, because of their unique property (current flows in only one direction) they are used in many electronic or electrical circuits like rectifiers, switches, clippers, clampers, voltage multipliers.. 0000075795 00000 n They are also called p-n diodes in analogy with vacuum diodes. 0000013675 00000 n It pushes electrons to the left and holes to the right – exactly opposite the way that they are diffusing. Negative charge stops electrons from further diffusion Positive charge stops holes from further diffusion The diffusion forms a dipole charge layer at the p-n junction interface. Diffusion is the process of movement of charge carriers due to concentration gradient along the semiconductor. In practice, no diode is an Ideal diode, this means neither it acts as a perfect conductor when forward biased nor it acts as an insulator when it is reverse biased so Calculate the apparent resistance of a forward-biased p-n junction at room temperature (300 K) when the current through the junction is 5 mA. 0000017441 00000 n Diodes and Thyristors A diode (one way valve) is a PN junction with p-type on one side and n-type on the other. ��A4:�A ��������a�����)�ѹFO8V���(�"�XH�b��(���Q�{�q0���0b�̢*'zn����uY٫�9�߸��Uc�c�Ҿ)�5P1�C��:�dx��XSk�gɧ�>c�� �/�s5�Rg�=�����^��ҏ��� 0000019397 00000 n There is a “built-in” VOLTAGE at the p-n junction interface that prevents penetration of electrons into the p-side and holes into the n-side. 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